30 December 2016 Numerical modeling of microwave switchers with subpicosecond time delay
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022410 (2016) https://doi.org/10.1117/12.2266551
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
In this article the layout and structure of the microwave switcher based on the managed electron density maximum rearrangement in multi-contacts functionally integrated active region are considered. The basis of the microwave switcher is a normally opened high electron mobility transistor structure (HEMT) with multiple Schottky gates and the corresponding number of switching ohmic contacts. In this research two-dimensional finite-difference physical and topological model of the considered microwave switchers is proposed. The distinctive features of the proposed model are combination of two different sets of variables and explicit first-order upwind discretization scheme for the normalized continuity equation. The obtained results of numerical modeling are discussed.
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B. Konoplev, B. Konoplev, E. Ryndin, E. Ryndin, } "Numerical modeling of microwave switchers with subpicosecond time delay ", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022410 (30 December 2016); doi: 10.1117/12.2266551; https://doi.org/10.1117/12.2266551
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