30 December 2016 Ambipolar memristor-based oscillator
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022411 (2016) https://doi.org/10.1117/12.2266868
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
This paper considers the possibility of constructing nonreactive memristor-based oscillators adding a device exhibiting negative differential resistance (NDR). The ambipolarity of the memristor I-V characteristic is shown to ensure the generation mode of such circuits. S-type and N-type variants of the memristor-based oscillator are analyzed. Device and circuit implementations of ambipolar memristors are suggested. NDR devices, as well as single-threshold comparators can be used in the implementation of ambipolar memristor-based oscillators.
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Vladimir V. Rakitin, Vladimir V. Rakitin, Alexander V. Rakitin, Alexander V. Rakitin, } "Ambipolar memristor-based oscillator", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022411 (30 December 2016); doi: 10.1117/12.2266868; https://doi.org/10.1117/12.2266868
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