30 December 2016 Calculation of the high-frequency conductivity and the Hall constant of a thin semiconductor film
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022413 (2016) https://doi.org/10.1117/12.2265659
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
The task about calculation of high-frequency conductivity and Hall constant of a thin semiconductor film is solved by the kinetic method. This film is placed in transverse stationary magnetic field and longitudinal alternative electric field. The ratio between film thickness and mean free path of charge carriers is assumed to be arbitrary. Skin effect is negligible. The diffuse-specular mechanism of charge carriers scattering from film surfaces is considered in the view of equal mirrority coefficients of the upper and lower film surfaces. The dependences of non-dimensional conductivity and Hall constant on non-dimensional parameters: electric field frequency, magnetic field induction and film thickness are investigated. The comparative analysis of obtained results with the calculations for the case of a metal film are made.
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O. V. Savenko, O. V. Savenko, D. N. Romanov, D. N. Romanov, I. A. Kuznetsova, I. A. Kuznetsova, } "Calculation of the high-frequency conductivity and the Hall constant of a thin semiconductor film", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022413 (30 December 2016); doi: 10.1117/12.2265659; https://doi.org/10.1117/12.2265659
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