30 December 2016 Compact modeling of radiation-induced drain leakage current
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022415 (2016) https://doi.org/10.1117/12.2267161
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
A compact MOSFET model is described, which is adapted to simulate the drain current under irradiation.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. G. Drosdetsky, V. V. Orlov, G. I. Zebrev, "Compact modeling of radiation-induced drain leakage current", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022415 (30 December 2016); doi: 10.1117/12.2267161; https://doi.org/10.1117/12.2267161
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