30 December 2016 Compact modeling of radiation-induced drain leakage current
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022415 (2016) https://doi.org/10.1117/12.2267161
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
A compact MOSFET model is described, which is adapted to simulate the drain current under irradiation.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. G. Drosdetsky, M. G. Drosdetsky, V. V. Orlov, V. V. Orlov, G. I. Zebrev, G. I. Zebrev, } "Compact modeling of radiation-induced drain leakage current", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022415 (30 December 2016); doi: 10.1117/12.2267161; https://doi.org/10.1117/12.2267161
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