30 December 2016 Total ionizing dose effects modeling in common-gate tri-gate FinFETs using Verilog-A
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022416 (2016) https://doi.org/10.1117/12.2266864
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
We propose a Verilog-A modeling concept for modern bulk and SOI FinFETs TID sensitivity modeling. The concept allows to model the fin width and length dependencies of TID sensitivity.
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Maxim S. Gorbunov, Gennady I. Zebrev, "Total ionizing dose effects modeling in common-gate tri-gate FinFETs using Verilog-A", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022416 (30 December 2016); doi: 10.1117/12.2266864; https://doi.org/10.1117/12.2266864
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