30 December 2016 Problems and prospects of maskless (B)EUV lithography
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102241O (2016) https://doi.org/10.1117/12.2267125
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
Based on the analysis of the simplest circuit with a two-mirror objective, the potential performance of the lithographic process of a Maskless X-ray lithographer (MLXL) with a Xe X-ray source at a wavelength of 11.2 nm is consider. It is shown that at a laser power of 1 kW the performance of the lithographer may reach of 22 wafers with a diameter of 300 mm per hour. The main factors that affect the performance are analyzed, and directions for optimization MLXL optical circuit are discussed. Experimental results of studying the roughness and the surface shape, and the Mo / Si multilayer mirror reflectance deposited onto the surface of a commercially available micro-electro-mechanical system (MEMS) with a pixel size of 8 μm are presented. The reflection coefficient at a wavelength of 13.5 nm was about 3%. The reasons of low reflectance are discussed. The conclusion is that at the moment the creation of MEMS with improved characteristics is the key problem, the solution of which depends MLXL prospects.
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N. I. Chkhalo, V. N. Polkovnikov, N. N. Salashchenko, M. N. Toropov, "Problems and prospects of maskless (B)EUV lithography", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102241O (30 December 2016); doi: 10.1117/12.2267125; https://doi.org/10.1117/12.2267125
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