30 December 2016 Resistless lithography - selective etching of silicon with gallium doping regions
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102241P (2016) https://doi.org/10.1117/12.2266347
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
This paper presents the results for used of resistless lithography with a further reactive-ion etching (RIE) in various chemistry after local (Ga+) implantation of silicon with different doping dose and different size doped regions. We describe the different etching regimes for pattern transfer of FIB implanted Ga masks in silicon. The paper studied the influence of the implantation dose on the silicon surface, the masking effect and the mask resistance to erosion at dry etching. Based on these results we conclude about the possibility of using this method to create micro-and nanoscale silicon structures.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Abdullaev, D. Abdullaev, R. Milovanov, R. Milovanov, D. Zubov, D. Zubov, } "Resistless lithography - selective etching of silicon with gallium doping regions", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102241P (30 December 2016); doi: 10.1117/12.2266347; https://doi.org/10.1117/12.2266347
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