30 December 2016 Deposition of polymers on structures with nano-gaps fabricated between carbon nanotubes by focused ion beam etching
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102241R (2016) https://doi.org/10.1117/12.2266747
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
Carbon nanotube (CNT) and SiO2 etching effects was studied and was found that using different techniques of focused ion beam (FIB) exposure and using two pass etching leads to a significant difference in the etching rate of CNTs relatively of SiO2 and directly individually oxide itself. The parameters annealing of the structures to remove the effects of the charge arising from the etching of CNT on SiO2 was determined and the effect of the charge on the effects of the deposition of organic molecules from solution was studied. Different behavior of deposition of polar and non-polar polymer materials on charged regions with width less than 100 nm was found. Obtained structures was investigated by SEM, AFM methods and for structures with polyaniline deposited CVC was measured and by comparison with literature and experimental data analysis of polyaniline structuring in nano-scale gap formed with FIB was carried out.
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A. V. Romashkin, A. V. Emelianov, K. A. Tsarik, I. I. Bobrinetskiy, "Deposition of polymers on structures with nano-gaps fabricated between carbon nanotubes by focused ion beam etching", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102241R (30 December 2016); doi: 10.1117/12.2266747; https://doi.org/10.1117/12.2266747
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