30 December 2016 Plasma parameters and active species kinetics in CF4/O2/Ar gas mixture: effects of CF4/O2 and O2/Ar mixing ratios
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102241U (2016) https://doi.org/10.1117/12.2266348
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
The effects of both CF4/O2 and O2/Ar mixing ratios in three-component CF4/O2/Ar mixture on plasma parameters, densities and fluxes of active species determining the dry etching kinetics were analyzed. The investigation combined plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling. It was found that the substitution of CF4 for O2 at constant fraction of Ar in a feed gas produces the non-monotonic change in F atom density, as it was repeatedly reported for the binary CF4/O2 gas mixtures. At the same time, the substitution of Ar for O2 at constant fraction of CF4 results in the monotonic increase in F atom density toward more oxygenated plasmas. The natures of these phenomena as well as theirs possible impacts on the etching/polymerization kinetics were discussed in details.
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Junmyung Lee, Junmyung Lee, Kwang-Ho Kwon, Kwang-Ho Kwon, A. Efremov, A. Efremov, } "Plasma parameters and active species kinetics in CF4/O2/Ar gas mixture: effects of CF4/O2 and O2/Ar mixing ratios", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102241U (30 December 2016); doi: 10.1117/12.2266348; https://doi.org/10.1117/12.2266348
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