30 December 2016 Comparative study of CF4- and CHF3-based plasmas for dry etching applications
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102241W (2016) https://doi.org/10.1117/12.2266715
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
The influence of O2/Ar mixing ratio on plasma characteristics, densities and fluxes of active species determining the dry etching kinetics in both CF4/O2/Ar and CHF3/O2/Ar plasmas was studied. The investigation combined plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling. It was found that the substitution of O2 for Ar at constant fraction of CF4 or CHF3 in a feed gas noticeably changes electron temperature and electron density, but does not result in the non-monotonic behavior of F atom density. The differences between two gas systems were discussed in details from the point of view of plasma chemistry.
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A. Efremov, K.-H. Kwon, A. Morgunov, D. Shabadarova, "Comparative study of CF4- and CHF3-based plasmas for dry etching applications", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102241W (30 December 2016); doi: 10.1117/12.2266715; https://doi.org/10.1117/12.2266715
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