30 December 2016 Cellular-automata model of oxygen plasma impact on porous low-K dielectric
Author Affiliations +
Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102241X (2016) https://doi.org/10.1117/12.2266626
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
Cellular-automata model of oxygen plasma influence on the integral properties of porous low-K dielectric is studied. The present work investigates the imitative simulation of this process. In our model we consider one isolated pore, which is simulated by cylinder with length L=200 nm and radius 1 nm ignoring the curvature factor. The simulation was performed for 2 million automata steps that correspond to 2 seconds in the real process time. Extrapolating the data to the longer time shows that more and more •CH3 groups will be replaced by the •OH groups, and over time almost all methyl groups will leave the pore surface (there is not more than 20% of the initial methyl groups amount on the first low-K dielectric 40nm after 2 seconds simulation).
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Askar Rezvanov, Askar Rezvanov, Igor V. Matyushkin, Igor V. Matyushkin, Oleg P. Gutshin, Oleg P. Gutshin, Evgeny S. Gornev, Evgeny S. Gornev, } "Cellular-automata model of oxygen plasma impact on porous low-K dielectric", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102241X (30 December 2016); doi: 10.1117/12.2266626; https://doi.org/10.1117/12.2266626
PROCEEDINGS
10 PAGES


SHARE
Back to Top