Investigation of the reactive ion etching of Ge2Sb2Te5 thin films

A. Shulyatev; A. Sherchenkov; D. Gromov; P. Lazarenko; A. Sysa; A. Kozmin

doi:10.1117/12.2267138

30 December 2016 Investigation of the reactive ion etching of Ge₂Sb₂Te₅ thin films

A. Shulyatev, A. Sherchenkov, D. Gromov, P. Lazarenko, A. Sysa, A. Kozmin

Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102241Y (2016) https://doi.org/10.1117/12.2267138
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

Process of reactive ion etching of Ge₂Sb₂Te₅ thin film was studied in the work. It was found that Ar+O₂ gas mixture has a minimum etching rate (7.4 nm/min) and Ar+SF₆ (37.0 nm/min) mixtures have highest etching rate. Surface roughness decreased from ~0.8 nm before etching to the value of ~0.5 nm after etching. EDXRA showed the absence of the contamination by the components of the gas mixtures after the etching.

Citation Download Citation

A. Shulyatev, A. Sherchenkov, D. Gromov, P. Lazarenko, A. Sysa, and A. Kozmin "Investigation of the reactive ion etching of Ge₂Sb₂Te₅ thin films", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102241Y (30 December 2016); https://doi.org/10.1117/12.2267138

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