30 December 2016 Investigation of the reactive ion etching of Ge2Sb2Te5 thin films
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102241Y (2016) https://doi.org/10.1117/12.2267138
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
Process of reactive ion etching of Ge2Sb2Te5 thin film was studied in the work. It was found that Ar+O2 gas mixture has a minimum etching rate (7.4 nm/min) and Ar+SF6 (37.0 nm/min) mixtures have highest etching rate. Surface roughness decreased from ~0.8 nm before etching to the value of ~0.5 nm after etching. EDXRA showed the absence of the contamination by the components of the gas mixtures after the etching.
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A. Shulyatev, A. Shulyatev, A. Sherchenkov, A. Sherchenkov, D. Gromov, D. Gromov, P. Lazarenko, P. Lazarenko, A. Sysa, A. Sysa, A. Kozmin, A. Kozmin, } "Investigation of the reactive ion etching of Ge2Sb2Te5 thin films", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102241Y (30 December 2016); doi: 10.1117/12.2267138; https://doi.org/10.1117/12.2267138
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