30 December 2016 A study of the vertical walls and the surface roughness GaAs after the operation in the combined plasma etching
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102241Z (2016) https://doi.org/10.1117/12.2267120
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
The paper presents the experimental results of the combination of AFM lithography and plasma chemical etching the surface of the gallium arsenide samples. Results dilution and application modes for AFM lithography photoresist, also shown on the image forming modes photoresist surface. Showing results nanoprofilirovaniya surface. Results regimes plasma chemical etching. The analysis of the etching rate is etched surface roughness was studied by atomic force microscopy. Judged from the vertical deflection angle of the initial structures and photoresist obtained after etching.
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Viktor S. Klimin, Viktor S. Klimin, Maxim S. Solodovnik, Maxim S. Solodovnik, Vladimir A. Smirnov, Vladimir A. Smirnov, Andrey V. Eskov, Andrey V. Eskov, Roman V. Tominov, Roman V. Tominov, Oleg A. Ageev, Oleg A. Ageev, } "A study of the vertical walls and the surface roughness GaAs after the operation in the combined plasma etching", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102241Z (30 December 2016); doi: 10.1117/12.2267120; https://doi.org/10.1117/12.2267120
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