30 December 2016 Low-damage plasma etching of porous low-k films in CF3Br and CF4 plasmas under low-temperature conditions
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022420 (2016) https://doi.org/10.1117/12.2267113
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
Low temperature etching of organosilicate low-k dielectrics in CF3Br and CF4 plasmas is studied. Chemical composition if pristine film and etched were measured by FTIR. Decrease in plasma-induced damage under low-temperature conditions is observed. It is shown that the plasma damage reduction is related to accumulation of reaction products. The reaction products could be removed by thermal bake. In the case of CF4 plasma, the thickness of CFx polymer increases with the temperature reduction. This polymer layer leads to strong decrease of diffusion rate of fluorine atoms and as a consequence to reduction of plasma-induced damage (PID). Bromine containing reaction products are less efficient for low-k surface protection against the plasma damage.
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A. Miakonkikh, A. Miakonkikh, I. Clemente, I. Clemente, A. Vishnevskiy, A. Vishnevskiy, K. Rudenko, K. Rudenko, M. Baklanov, M. Baklanov, } "Low-damage plasma etching of porous low-k films in CF3Br and CF4 plasmas under low-temperature conditions", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022420 (30 December 2016); doi: 10.1117/12.2267113; https://doi.org/10.1117/12.2267113
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