30 December 2016 Temperature switching waves in a silicon wafer on lamp-based heating
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022422 (2016) https://doi.org/10.1117/12.2266553
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
The dynamic properties of a silicon wafer thermally heated up under a bistable regime in a lamp-based reactor are simulated with regard to an optical non-gomogeneity as a nucleus of a high-temperature phase. The optical non-gomogeneity is represented by a doped layer region on the surface of the wafer imposed by radiation. It is shown that under these conditions temperature switching waves are formed in the wafer. Experimental verification of propagating the switching waves of temperature is obtained at the silicon wafer transition derived from the lower-temperature state to its upper-temperature state and the velocity of the waves is evaluated.
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Vladimir V. Ovcharov, Alexey L. Kurenya, Valery I. Rudakov, Valeriya P. Prigara, "Temperature switching waves in a silicon wafer on lamp-based heating ", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022422 (30 December 2016); doi: 10.1117/12.2266553; https://doi.org/10.1117/12.2266553
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