30 December 2016 Evolution of structural properties of Si(001) subsurface layer containing He bubbles by low temperature annealing
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022424 (2016) https://doi.org/10.1117/12.2266944
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
Transformation of microstructure of the buried He bubbles of silicon surface layer after He+ low energy plasma immersion ion implantation and subsequent low-thermal annealing were studied by high resolution X-ray diffraction and reflectivity, Rutherford backscattering spectroscopy, transmission electron and atomic force microscopy methods. The ion energies varied in the range 2 – 5 keV at constant exposure ion doses 5×·1017 cm-2. Formation of a three-layer structure (amorphous a-SiOx layer at the surface, amorphous a-Si layer with helium bubbles and buried helium bubbles heavy damaged tensile strained crystalline c-Si layer) that is retained after annealing was observed. Helium-filled bubbles are observed in an as-implanted sample. Evolution of the multilayer structure and the bubbles due to annealing are revealed and comparing with the structural parameters of an as-implanted sample was done. The bubbles are shown to trend into two-model distribution after annealing. The characteristic bubble size is determined to be in a range of 2–20 nm. Large size helium-filled bubbles are located in the amorphous a-Si layer. Small size bubbles are revealed inside the damaged crystalline Si layer. These bubbles are a major source of tensile strain in c-Si layer.
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Andrey A. Lomov, Kirill D. Shcherbachev, Yury M. Chesnokov, Dmitrii A. Kiselev, Andrew V. Miakonkikh, "Evolution of structural properties of Si(001) subsurface layer containing He bubbles by low temperature annealing", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022424 (30 December 2016); doi: 10.1117/12.2266944; https://doi.org/10.1117/12.2266944
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