30 December 2016 Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022425 (2016) https://doi.org/10.1117/12.2266634
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
Atomic layer deposition (ALD) of Al2O3 on Si and AlGaN substrates was studied in situ by means of spectral ellipsometry. Method was used for optimization of process of atomic layer deposition. Optical model takes into account all layers of transparent structure typical for gallium nitride devices Al2O3/AlGaN/AlN/GaN. Developed model is able to measure in situ temperature of wafer before the process and its change during the deposition which is critical for development of new process and understanding of chemical reactions. Difference in temperature between chuck and sample were calculated. Spectral ellipsometry was used to determine initial nucleation lag of film growth which is different on silicon and AlGaN surface and chemical transient during the first steps of deposition. Removal of native oxide in AlGaN structures could play key role in observed effects of passivation GaN transistor structures by alumina.
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Iosif E. Clemente, Iosif E. Clemente, Andrey V. Miakonkikh, Andrey V. Miakonkikh, } "Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022425 (30 December 2016); doi: 10.1117/12.2266634; https://doi.org/10.1117/12.2266634
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