30 December 2016 Non-destructive determination of thickness of the dielectric layers using EDX
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022426 (2016) https://doi.org/10.1117/12.2265570
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
In this work a non-destructive method for measuring the thickness of the dielectric layers consisting of silicon dioxide and silicon nitride has been developed using a scanning electron microscope (SEM) equipped with energy dispersive X-ray spectrometer (EDS). Rising in accelerating voltage of electron beam leads to increasing in the depth of generation of the characteristic X-ray. If the ratio of the signal intensity of one of the substrate’s elements to the noise equal to 3 suggests that the generation’s depth of the characteristic X-ray coincides with the thickness of the overlying film. Dependence of the overlying film's thickness on the accelerating voltage can be plotted. Validation of the results was carried out by using the equation of Anderson-Hassler. The generation’s volume of the characteristic X-Ray was simulated by CASINO program. The simulations results are in good agreement with experimental results for small thicknesses.
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S. A. Sokolov, S. A. Sokolov, E. A. Kelm, E. A. Kelm, R. A. Milovanov, R. A. Milovanov, D. A. Abdullaev, D. A. Abdullaev, L. N. Sidorov, L. N. Sidorov, } "Non-destructive determination of thickness of the dielectric layers using EDX", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022426 (30 December 2016); doi: 10.1117/12.2265570; https://doi.org/10.1117/12.2265570
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