30 December 2016 Multifunctional quantum node based on double quantum dot in laser and cavity fields
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102242G (2016) https://doi.org/10.1117/12.2266849
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
The concept of multifunctional device (a quantum node) composed of a semiconductor single-electron four-level doublequantum dot coupled to an optical microcavity resonator is developed. The terahertz laser field and voltage biases provide an external control. The structure enables flexible driving via appropriate variations of field amplitudes and switching between resonant and off-resonant modes. As shown this hybrid electron-photon system can be used as the charge qubit with flying-to-stationary qubit conversion or the single-photon transistor and several others. Each of listed devices works in the specific regime of system evolution. For example, the qubit is robust when the optical resonator and laser Rabi frequencies dominate the dissipation rates – the so-called strong coupling or coherent regime. From another hand, in order to attain the steady-state one has to work in the so-called weak coupling or incoherent regime when the dissipation rates are comparable to or greater than the Rabi frequencies. Further, the single-photon driving is required for spectroscopic applications of this system. We numerically investigate the population dynamics to reveal the parameter choice corresponding to each device. The model is based on Lindblad formalism where all incoherent processes are considered as the markovian ones. The time dependencies of populations and spectrograms for different pairs of parameters are obtained. The specific features concerned with working characteristics of the quantum node in different modes are discussed.
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Alexander V. Tsukanov, "Multifunctional quantum node based on double quantum dot in laser and cavity fields", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102242G (30 December 2016); doi: 10.1117/12.2266849; https://doi.org/10.1117/12.2266849
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