30 December 2016 Effect of crosstalk on QBER in QKD in urban telecommunication fiber lines
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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102242U (2016) https://doi.org/10.1117/12.2266754
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation
Abstract
Quantum key distribution (QKD) as a technology is being actively implemented into existing urban telecommunication networks. QKD devices are commercially available products. While sending single photons through optical fiber, adjacent fibers, which are used to transfer classical information, might influence the amount of registrations of single photon detectors. This influence is registered, since it directly introduces a higher quantum bit error rate (QBER) into the final key [1-3]. Our report presents the results of the first tests of the QKD device, developed in the Russian Quantum Center. These tests were conducted in Moscow, and are the first of such a device in Russia in urban optical fiber telecommunication networks. The device in question is based on a two-pass auto-compensating optical scheme, which provides stable single photon transfer through urban optical fiber telecommunication networks [4,5]. The single photon detectors ID230 by ID Quantique were used. They operate in free-running mode, and with a quantum effectiveness of 10 % have a dark count ~10 Hz. The background signal level in the dedicated fiber was no less than 5.6∙10-14 W, which corresponds to 4.4∙104 detector clicks per second. The single mode fiber length in Moscow was 30.6 km, the total attenuation equal to 11.7 dB. The sifted quantum key bit rate reached values of 1.9 kbit/s with the QBER level equal to 5.1 %. Methods of lowering the influence of crosstalk on the QBER are considered.
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Vladimir L. Kurochkin, Yuriy V. Kurochkin, Alexander V. Miller, Alexander S. Sokolov, Alan A. Kanapin, "Effect of crosstalk on QBER in QKD in urban telecommunication fiber lines", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102242U (30 December 2016); doi: 10.1117/12.2266754; https://doi.org/10.1117/12.2266754
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