In the present paper the results of structural properties and photoluminescence (PL) measurements (temperature range of 77 – 300 K) of melt grown Ca4Ga2S7 single crystals doped with 5 at% of rare earth (RE) Eu2+ (Ca4Ga2S7 : Eu2+) are described for the first time. It is shown that, broadband PL with a maximum at 660 nm is caused with intra shell transitions 4f65d - 4f7(8S7/2) of Eu2+ ions.
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Arif M. Pashayev, Bahadir G. Tagiev, Oktay B. Tagiev, Ilkin T. Huseynov, Kerim R. Allahverdiyev, "Synthesis and characterization of rare earth doped ternary chalcogenide semiconductors: effective electro-luminescence and laser materials," Proc. SPIE 10226, 19th International Conference and School on Quantum Electronics: Laser Physics and Applications, 102260J (5 January 2017);