5 January 2017 Synthesis and characterization of rare earth doped ternary chalcogenide semiconductors: effective electro-luminescence and laser materials
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Proceedings Volume 10226, 19th International Conference and School on Quantum Electronics: Laser Physics and Applications; 102260J (2017) https://doi.org/10.1117/12.2260889
Event: International Conference and School on Quantum Electronics "Laser Physics and Applications" - ICSQE 2016, 2016, Sozopol, Bulgaria
Abstract
Thiogallate compounds represented by general formula MGa2S4 [where M- Ca+2, Ba+2, Sr+2, Pb+2, Eu+2, Eu+3, (Na+1La+3) and (Na+1Ce+3)] are highly effective electro-luminescence and laser materials. These materials were first synthesized in 1971 and studied by many groups due to their possible applicability in opto-, and quantum- electronics. Forbidden band gap (ΔE) at room temperature (RT) for these materials varies in a wide range from ΔE ∼ eV for CaGa2S4 to ∼ 2.32 eV for Ca4Ga2S7.

In the present paper the results of structural properties and photoluminescence (PL) measurements (temperature range of 77 – 300 K) of melt grown Ca4Ga2S7 single crystals doped with 5 at% of rare earth (RE) Eu2+ (Ca4Ga2S7 : Eu2+) are described for the first time. It is shown that, broadband PL with a maximum at 660 nm is caused with intra shell transitions 4f65d - 4f7(8S7/2) of Eu2+ ions.
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Arif M. Pashayev, Arif M. Pashayev, Bahadir G. Tagiev, Bahadir G. Tagiev, Oktay B. Tagiev, Oktay B. Tagiev, Ilkin T. Huseynov, Ilkin T. Huseynov, Kerim R. Allahverdiyev, Kerim R. Allahverdiyev, } "Synthesis and characterization of rare earth doped ternary chalcogenide semiconductors: effective electro-luminescence and laser materials", Proc. SPIE 10226, 19th International Conference and School on Quantum Electronics: Laser Physics and Applications, 102260J (5 January 2017); doi: 10.1117/12.2260889; https://doi.org/10.1117/12.2260889
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