Black silicon n-type photodiodes with high response over wide spectral range

Juha Heinonen; Mikko A. Juntunen; Hannu S. Laine; Ville Vähänissi; Päivikki Repo; Timo Dönsberg; Hele Savin

doi:10.1117/12.2264998

16 May 2017 Black silicon n-type photodiodes with high response over wide spectral range

Juha Heinonen, Mikko A. Juntunen, Hannu S. Laine, Ville Vähänissi, Päivikki Repo, Timo Dönsberg, Hele Savin

Proceedings Volume 10231, Optical Sensors 2017; 102310X (2017) https://doi.org/10.1117/12.2264998
Event: SPIE Optics + Optoelectronics, 2017, Prague, Czech Republic

Abstract

Commercial photodiodes suffer from reflection losses and different recombination losses that reduce the collection efficiency of photogenerated charge carriers. Recently, we realized a near-ideal silicon photodiode, which steps closer to the physical performance limits of silicon photodiodes than any other silicon photodiode realized before. Our device exhibits an external quantum efficiency above 95% over the wavelength range of 235 – 980 nm, and provides a very high response at incident angles of up to 70 degrees. The high quantum efficiency is reached by 1) virtually eliminating front surface reflectance by forming a “black silicon” nanostructured surface having dimensions in the range of wavelength of optical light and 2) using an induced junction for signal collection, formed by negatively charged alumina, instead of a conventional doped p-n junction. Here, we describe the latest efforts in further development of the photodiode technology. In particular, we report improvements both in the short wavelength response via better control of the surface quality, and superior response to photons with energies close to the silicon bandgap.

Conference Presentation

Citation Download Citation

Juha Heinonen, Mikko A. Juntunen, Hannu S. Laine, Ville Vähänissi, Päivikki Repo, Timo Dönsberg, and Hele Savin "Black silicon n-type photodiodes with high response over wide spectral range", Proc. SPIE 10231, Optical Sensors 2017, 102310X (16 May 2017); https://doi.org/10.1117/12.2264998

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available