15 May 2017 Formation of periodic relief at Sc/Si multilayer surface under EUV laser irradiation
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Abstract
By methods of hard X-ray diffraction (λ=0.154 nm) and scanning electron microscopy the surface morphology of Sc/Si multilayer mirrors influenced with nanosecond pulses of discharge capillary laser (λ=46.9 nm) is studied. Under irradiation a relief of periodically alternating valleys and ridges is formed. The region of observed relief is extended over the space being ~104 greater than the irradiated region. Periodic relief (periodicity of 2.2-2.3 μm) appears as a result of reaction between Sc and Si layers making valleys (Sc3Si5 silicide) and ridges (ScSi monosilicide). Each of periods has complex structure exactly repeated in neighbor periods. Mechanisms of periodic relief formation are discussed.
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Y. P. Pershyn, A. Zolotaryov, J. J. Rocca, A. Y. Devizenko, V. V. Kondratenko, I. A. Artyukov, A. V. Vinogradov, "Formation of periodic relief at Sc/Si multilayer surface under EUV laser irradiation", Proc. SPIE 10236, Damage to VUV, EUV, and X-ray Optics VI, 102360J (15 May 2017); doi: 10.1117/12.2267292; https://doi.org/10.1117/12.2267292
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