11 May 2017 AlGaInN laser diode bars for high-power, optical integration and quantum technologies
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Abstract
GaN laser diodes fabricated from the AlGaInN material system is an emerging technology for high power, optical integration and quantum applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well, giving rise to new and novel applications including displays and imaging systems, free-space and underwater telecommunications and the latest quantum technologies such as optical atomic clocks and atom interferometry.
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S. P. Najda, P. Perlin, T. Suski, L. Marona, S. Stanczyk, P. Wisniewski, R. Czernecki, D. Schiavon, M. Leszczyński, "AlGaInN laser diode bars for high-power, optical integration and quantum technologies", Proc. SPIE 10238, High-Power, High-Energy, and High-Intensity Laser Technology III, 102380W (11 May 2017); doi: 10.1117/12.2269778; https://doi.org/10.1117/12.2269778
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