Paper
2 June 2017 Watt-level yellow emitting lasers by frequency doubling of high power diode lasers
R. Bege, D. Jedrzejczyk, J. Hofmann, G. Blume, D. Feise, F. Bugge, K. Paschke, G. Tränkle
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Abstract
Distributed Bragg reflector tapered diode lasers (DBR-TPL) based on a quantum-well structure are presented, which emit at various wavelengths between 1100 and 1200 nm. Long lifetimes of these diode lasers are demonstrated. The lasers feature a high radiance facilitating a highly efficient second harmonic generation (SHG) in lithium niobate (PPMgO:LN) ridge waveguide crystals in a single-pass configuration. SHG output powers up to 0.86 W corresponding to SHG power densities in the ridge waveguide core > 1 MW/cm2 are achieved for nearly diffraction limited beams at wavelengths of 561, 578 and 589 nm. Absorption behavior at these power densities is investigated without observation of nonlinear absorption phenomena.
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R. Bege, D. Jedrzejczyk, J. Hofmann, G. Blume, D. Feise, F. Bugge, K. Paschke, and G. Tränkle "Watt-level yellow emitting lasers by frequency doubling of high power diode lasers", Proc. SPIE 10238, High-Power, High-Energy, and High-Intensity Laser Technology III, 102380X (2 June 2017); https://doi.org/10.1117/12.2264770
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KEYWORDS
Second-harmonic generation

Semiconductor lasers

High power diode lasers

Absorption

Waveguides

Crystals

Distributed Bragg reflectors

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