11 May 2017 Influence of resonator length on catastrophic optical damage in high-power AlGaInP broad-area lasers
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Abstract
The increasing importance of extracting high optical power out of semiconductor lasers motivated several studies in catastrophic optical damage (COD) level improvement. In this study, the influence of the resonator length in high-power broad-area (BA) AlGaInP lasers on COD is presented. For the analyses, several 638 nm AlGaInP 60 μm BA lasers from the same wafer were used. Resonator lengths of 900, 1200, 1500, and 1800 μm were compared. In order to independently examine the effect of the resonator length on the maximum power reached by the lasers before COD (PCOD), the lasers used are uncoated and unmounted, and PCOD under pulsed mode was determined. It was found that higher output powers and eventually higher PCOD can be achieved using longer resonators; however, it was also found that this is mainly useful when working at high output powers far away from the laser threshold, since the threshold current and slope efficiency worsen when the resonator length increases.
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Marwan Bou Sanayeh, "Influence of resonator length on catastrophic optical damage in high-power AlGaInP broad-area lasers", Proc. SPIE 10238, High-Power, High-Energy, and High-Intensity Laser Technology III, 1023810 (11 May 2017); doi: 10.1117/12.2264983; https://doi.org/10.1117/12.2264983
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