5 January 2017 Low temperature readout circuit characteristics of low dimensional compound semiconductor photodetectors
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Proceedings Volume 10244, International Conference on Optoelectronics and Microelectronics Technology and Application; 1024416 (2017) https://doi.org/10.1117/12.2264581
Event: International Conference on Optoelectronics and Microelectronics Technology and Application, 2016, Shanghai, China
Abstract
In this paper we analyze the necessity of design of low temperature readout circuit. Since the photodetector should work in low temperature environment, it is necessary for the readout circuit with low temperature readout function. Meanwhile, the influence factors of ultra - low temperature on the CMOS readout circuit are analyzed. The main influencing factors are carrier freezing analysis, current mutation (Kink) and mobility change. Finally, we used JANIS SHI-4-2 liquid helium cycle refrigeration system as a refrigeration instrument, and do the test for the readout circuit at ultra -low-temperature. When the temperature of cold head of the cooling system reach to the minimum temperature (4.85K) and maintain 5 hours, Si substrate’ temperature reaches the minimum temperature (50.1K). By adjusting the static operating point voltage, we find that the circuit still works well.
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Jie Song, Jie Song, Wei Wang, Wei Wang, Haidong Lu, Haidong Lu, Fangmin Guo, Fangmin Guo, } "Low temperature readout circuit characteristics of low dimensional compound semiconductor photodetectors", Proc. SPIE 10244, International Conference on Optoelectronics and Microelectronics Technology and Application, 1024416 (5 January 2017); doi: 10.1117/12.2264581; https://doi.org/10.1117/12.2264581
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