5 January 2017 Radiation characteristics of photoconductive antennas based on low-temperature grown GaAs
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Proceedings Volume 10244, International Conference on Optoelectronics and Microelectronics Technology and Application; 102441N (2017) https://doi.org/10.1117/12.2264359
Event: International Conference on Optoelectronics and Microelectronics Technology and Application, 2016, Shanghai, China
Abstract
Terahertz radiation was generated with several designs of photoconductive antennas (strip line, dipole, trapezoid, bow-tie) fabricated on low-temperature-grown GaAs (LT-GaAs) and the emission properties of the photoconductive antennas were compared with each other. The bow-tie photoconductive antennas with nano cylinder also be fabricated. The radiation characteristics of each antenna was characterized by THz-TDS. The radiation power of the photoconductive antennas with different antenna shapes showed significant difference. The underlying physics of nano-structured PCAs are still in their early stages. Our findings will pave the way for new perspectives in the design and analysis of novel structures for more efficient THz photonic devices.
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Zhiguang Ao, Zhiguang Ao, Guofeng Song, Guofeng Song, Yun Xu, Yun Xu, } "Radiation characteristics of photoconductive antennas based on low-temperature grown GaAs", Proc. SPIE 10244, International Conference on Optoelectronics and Microelectronics Technology and Application, 102441N (5 January 2017); doi: 10.1117/12.2264359; https://doi.org/10.1117/12.2264359
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