5 January 2017 Interface state density effect on the performance of graphene silicon heterojunction solar cell
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Proceedings Volume 10244, International Conference on Optoelectronics and Microelectronics Technology and Application; 102441U (2017) https://doi.org/10.1117/12.2264363
Event: International Conference on Optoelectronics and Microelectronics Technology and Application, 2016, Shanghai, China
Abstract
A planar structure consisting of graphene layer as the hole transport material, and n-type silicon as substrate is simulated. The degradation of this cell caused by high interface state density has been carried out. The simulated results match published experimental results indicating the accuracy of the physics-based model. Using this model, the effect of interface state density as zero, 1×1016cm-2, 1×1017cm-2 on the photovoltaic performance has been studied. The obtained IV and EQE characteristic based on realistic parameters shows that the interface state playing a prominent role in graphene silicon schottky contact.
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Yawei Kuang, Bencai Lin, Yulong Ma, Yushen Liu, Xifeng Yang, Debao Zhang, Zhenguang Shao, Jinfu Feng, "Interface state density effect on the performance of graphene silicon heterojunction solar cell", Proc. SPIE 10244, International Conference on Optoelectronics and Microelectronics Technology and Application, 102441U (5 January 2017); doi: 10.1117/12.2264363; https://doi.org/10.1117/12.2264363
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