5 January 2017 GaN-based flip-chip parallel micro LED array for visible light communication
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Proceedings Volume 10244, International Conference on Optoelectronics and Microelectronics Technology and Application; 102441Y (2017) https://doi.org/10.1117/12.2267389
Event: International Conference on Optoelectronics and Microelectronics Technology and Application, 2016, Shanghai, China
Abstract
In this study, GaN-based flip-chip parallel micro light-emitting diode (μLED) arrays have been fabricated. Compared to a single LED with the same active region area, flip-chip parallel μLED arrays are superior on both modulation bandwidth and light output because of the uniform current spreading, improved heat dissipation, and higher light extraction efficiency. With this structure, an injected current density up to 7900 A/cm2 has been achieved with a modulation bandwidth of ∼227 MHz. Meanwhile, the optical power is above 30 mW, which is more suitable for visible light communication in free space. The influence of resistance-capacitance (RC) time constant and carrier lifetime on the modulation bandwidth of parallel μLED arrays has also been investigated in details. This study will help the design of GaN-based LEDs to both enhance the modulation bandwidth and optical power.
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Shi-Chao Zhu, Shi-Chao Zhu, Li-Xia Zhao, Li-Xia Zhao, Chao Yang, Chao Yang, Hai-Cheng Cao, Hai-Cheng Cao, Zhi-Guo Yu, Zhi-Guo Yu, Lei Liu, Lei Liu, } "GaN-based flip-chip parallel micro LED array for visible light communication", Proc. SPIE 10244, International Conference on Optoelectronics and Microelectronics Technology and Application, 102441Y (5 January 2017); doi: 10.1117/12.2267389; https://doi.org/10.1117/12.2267389
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