5 January 2017 Schottky photodetector with tapered thin metal strip on silicon waveguide
Author Affiliations +
Proceedings Volume 10244, International Conference on Optoelectronics and Microelectronics Technology and Application; 1024420 (2017) https://doi.org/10.1117/12.2261325
Event: International Conference on Optoelectronics and Microelectronics Technology and Application, 2016, Shanghai, China
Abstract
We propose a Schottky photodetector with tapered thin metal strip on SOI platform. Schottky photodetector can detect photons below the semiconductor bandgap energy by exploiting the internal photoemission. In the internal photoemission process, the hot carriers generate in the tapered thin metal strip where light absorption occurs, and part of these carriers can be emitted over the Schottky barrier and collected as photocurrent. The small thickness of the tapered metal strip contributes to a high internal quantum efficiency of 11.25%. This metal-semiconductor structure acts as a photonics-plasmonics mode convertor. According to 3D-FDTD simulation, about 95.8% of the incident optical power can be absorbed in the absorption area within 4.5μm at wavelength of 1550 nm. The responsivity is estimated to be 0.135A/W at 1550 nm. This compact design with a low dark current has a minimum detectable power of -23.15 dβm. We argue that this design can promote the progress of all-Si photo-detection in near-infrared communication band.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jingshu Guo, Jingshu Guo, Zhiwei Wu, Zhiwei Wu, Yuan Li, Yuan Li, Yanli Zhao, Yanli Zhao, } "Schottky photodetector with tapered thin metal strip on silicon waveguide", Proc. SPIE 10244, International Conference on Optoelectronics and Microelectronics Technology and Application, 1024420 (5 January 2017); doi: 10.1117/12.2261325; https://doi.org/10.1117/12.2261325
PROCEEDINGS
5 PAGES


SHARE
Back to Top