30 May 2017 Temperature simulation at ZnO surface processed by laser interference lithography
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ZnO thin film on alumina has been deposited by RF sputtering and processed by two dimensional direct laser interference patterning (DLIP) using a nanosecond laser (λ=355nm). The thermodynamic and structural properties have been investigated.

Morphological characterization has shown a line-pattern structure with small alterations depending on the fluence of the laser (85 mJ/cm2 or 165 mJ/cm2). In order to understand these modifications, a simulation has been carried out to model the transient temperature during the DLIP to study the temperature reached by the ZnO surface for the different fluences. Moreover, a comparison with a non-interference energy distribution pulse is also simulated to corroborate the model.

For samples processed by DLIP, a thermal annealing effect has been noticed when temperatures at the surface are between 1000K and 1800K. Due to the slow cooling process, a possible recrystallization of the material similar to a thermal treatment is obtained. For temperatures close or higher than 1800K, the material starts to ablate.
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L. Parellada-Monreal, L. Parellada-Monreal, M. Martinez-Calderón, M. Martinez-Calderón, I. Castro-Hurtado, I. Castro-Hurtado, A. Rodríguez, A. Rodríguez, S. M. Olaizola, S. M. Olaizola, M. Gomez-Aranzadi, M. Gomez-Aranzadi, I. Ayerdi, I. Ayerdi, E. Castaño, E. Castaño, G. G. Mandayo, G. G. Mandayo, } "Temperature simulation at ZnO surface processed by laser interference lithography", Proc. SPIE 10246, Smart Sensors, Actuators, and MEMS VIII, 102461G (30 May 2017); doi: 10.1117/12.2266260; https://doi.org/10.1117/12.2266260

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