Resonant tunneling transport in ZnxBe1-xSe/ZnSe/ZnyBe1-ySe asymmetric quantum structures

Vadim P. Sirkeli; Oktay Yilmazoglu; Shihab Al-Daffaie; Ion Oprea; Duu Sheng Ong; Franko Küppers; Hans L. Hartnagel

doi:10.1117/12.2265367

30 May 2017 Resonant tunneling transport in Zn_xBe_1-xSe/ZnSe/Zn_yBe_1-ySe asymmetric quantum structures

Vadim P. Sirkeli, Oktay Yilmazoglu, Shihab Al-Daffaie, Ion Oprea, Duu Sheng Ong, Franko Küppers, Hans L. Hartnagel

Proceedings Volume 10248, Nanotechnology VIII; 1024811 (2017) https://doi.org/10.1117/12.2265367
Event: SPIE Microtechnologies, 2017, Barcelona, Spain

Abstract

II-VI compounds are promising materials for the fabrication of room-temperature terahertz devices due to their beneficial properties like as type-I conduction band alignment, high breakdown field strength (~331 kV/cm for ZnSe vs. ~80 kV/cm for GaAs), and higher values of the conduction band offset (1.5 eV for BeSe/ZnSe vs. 0.7 eV for AlAs/GaAs). In this paper we report on numerical study of the resonant tunneling transport in ZnBeSe/ZnSe/ZnBeSe symmetric and asymmetric resonant tunneling diodes (RTDs). The negative differential resistance feature is observed in the current-voltage characteristics of the ZnSe-based RTDs. It is found that the maximum of peak-to-valley ratio (PVR) of the current density is equal to 6.025 and 7.144 at 150 K, and to 1.120 and 1.105 at 300 K for the symmetric and asymmetric RTDs, respectively. The effect of barrier heights on the frequency and output power performance of RTD devices are studied and discussed.

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Vadim P. Sirkeli, Oktay Yilmazoglu, Shihab Al-Daffaie, Ion Oprea, Duu Sheng Ong, Franko Küppers, and Hans L. Hartnagel "Resonant tunneling transport in Zn_xBe_1-xSe/ZnSe/Zn_yBe_1-ySe asymmetric quantum structures", Proc. SPIE 10248, Nanotechnology VIII, 1024811 (30 May 2017); https://doi.org/10.1117/12.2265367

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