In this work, we have studied the effect of the stress layer in the modulation characteristics based on Mach-Zehnder interferometers. The deposition of silicon nitride as the stress layer and its optimization to induce the maximum effect will be presented.
ACCESS THE FULL ARTICLE
Mathias Berciano, Pedro Damas, Guillaume Marcaud, Xavier Le Roux, Paul Crozat, Carlos Alonso-Ramos, Daniel Benedikovic, Delphine Marris-Morini, Eric Cassan, Laurent Vivien, "Strain-induced Pockels effect in silicon waveguides (Conference Presentation)," Proc. SPIE 10249, Integrated Photonics: Materials, Devices, and Applications IV, 1024908 (16 June 2017);