Paper
5 April 1989 A Microscopic Approach To Amplitude Modulation With Small Signal Of Current
G . Chiaretti, M . Brambilla, M. Milani
Author Affiliations +
Proceedings Volume 1025, Semiconductor Lasers; (1989) https://doi.org/10.1117/12.950202
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
A microscopic approach to semiconductor injection laser dynamics is discussed to investigate the amplitude modulation with a small current signal in semiconductor lasers. An expression for the resonance frequency υr is obtained as a function of microscopic parameters which characterize the laser system. This expression can be compared with the one derived from a standard rate equations approach, showing the existence of an additional factor. This factor leads to the prediction of a larger resonance frequency and consequently to a better agreement with the experimental data. We investigate the problem of amplitude modulation with small current signal in semiconductor lasers deriving an expression for the resonance frequency as a function of microscopic parameters which characterize the laser system and as a function of the injected current. This approach is based on the analysis of the competition among the fundamental microscopic processes typical of light-matter interaction and of the loss and pumping mechanisms that are at work in a laser system. The starting point of the SLTMB model for the analysis of semiconductor laser modulation by a small signal of current is the couple of equations describing the temporal evolution of the two variables A2 (intensity of the coherent field in the optical cavity) and D (the carrier population inversion ).
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G . Chiaretti, M . Brambilla, and M. Milani "A Microscopic Approach To Amplitude Modulation With Small Signal Of Current", Proc. SPIE 1025, Semiconductor Lasers, (5 April 1989); https://doi.org/10.1117/12.950202
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KEYWORDS
Semiconductor lasers

Amplitude modulation

Laser systems engineering

Modulation

Laser damage threshold

Lead

Light-matter interactions

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