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5 April 1989 Index-guided GaAs/AlGaAs quantum well lasers grown by MOVPE
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Proceedings Volume 1025, Semiconductor Lasers; (1989) https://doi.org/10.1117/12.950210
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
Index-guided Multiple Quantum Well Separate Confinement Heterostructure (MQW-SCH) GaAs/AlGaAs laser diodes with a Self-Aligned Structure (SAS) as well as with a Ridge Wave-guide Structure (RWS) have been fabricated from wafers grown by MOVPE at atmospheric pressure. Apart from single emitters we have realized phase-locked index-guided laser arrays with four emitters in an RWS design. We have observed that at the same emission wavelength in the range of 750-880 nm the threshold current of an MQW-SCH SAS laser diode with four GaAs wells is lower than that of an SAS laser diode with a conventional AlGaAs active layer. However, the MQW lasers may show somewhat lower To values. Uncoated MQW-SCH RWS laser diodes (cavity length 250 μm) with one and four emitters have been fabricated having CW 30°C threshold currents as low as 12 mA and 40 mA, respectively. Above threshold the phase-locked laser array emitted in a phase-coupled super-mode, indicating both a good homogeneity of the grown material and a controlled device fabrication.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Henk F. J. van't Blik, Jolein H. J. M. Boerrigter-Lammers, Ad Valster, and Gerard A. Acket "Index-guided GaAs/AlGaAs quantum well lasers grown by MOVPE", Proc. SPIE 1025, Semiconductor Lasers, (5 April 1989); https://doi.org/10.1117/12.950210
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