Numerical Analysis Of Transverse Mode Competition In Ridge Waveguide Semiconductor Lasers

Ivan A. Maio

doi:10.1117/12.950213

5 April 1989 Numerical Analysis Of Transverse Mode Competition In Ridge Waveguide Semiconductor Lasers

Ivan A. Maio

Proceedings Volume 1025, Semiconductor Lasers; (1989) https://doi.org/10.1117/12.950213
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

The competition between two transverse lasing modes in ridp waveguide semiconductor lasers has been studied through a numerical model expressly developed. The model allows for spatial Me burning and its influence on the field shape. The numerical simulations have been executed employing theparamstets of InGaAsP-InP devices andvuying the cladding thickness in the interval where the field confinement changes from to gain guiding. Information on the of spatial hole burning on device efficiency, mode competition and polarization bistabifity has been obtained.

Citation Download Citation

Ivan A. Maio "Numerical Analysis Of Transverse Mode Competition In Ridge Waveguide Semiconductor Lasers", Proc. SPIE 1025, Semiconductor Lasers, (5 April 1989); https://doi.org/10.1117/12.950213

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available