5 April 1989 Numerical Analysis Of Transverse Mode Competition In Ridge Waveguide Semiconductor Lasers
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Proceedings Volume 1025, Semiconductor Lasers; (1989) https://doi.org/10.1117/12.950213
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
The competition between two transverse lasing modes in ridp waveguide semiconductor lasers has been studied through a numerical model expressly developed. The model allows for spatial Me burning and its influence on the field shape. The numerical simulations have been executed employing theparamstets of InGaAsP-InP devices andvuying the cladding thickness in the interval where the field confinement changes from to gain guiding. Information on the of spatial hole burning on device efficiency, mode competition and polarization bistabifity has been obtained.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ivan A. Maio, "Numerical Analysis Of Transverse Mode Competition In Ridge Waveguide Semiconductor Lasers", Proc. SPIE 1025, Semiconductor Lasers, (5 April 1989); doi: 10.1117/12.950213; https://doi.org/10.1117/12.950213
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