The competition between two transverse lasing modes in ridp waveguide semiconductor lasers has been studied through a numerical model expressly developed. The model allows for spatial Me burning and its influence on the field shape. The numerical simulations have been executed employing theparamstets of InGaAsP-InP devices andvuying the cladding thickness in the interval where the field confinement changes from to gain guiding. Information on the of spatial hole burning on device efficiency, mode competition and polarization bistabifity has been obtained.
Ivan A. Maio, Ivan A. Maio,
"Numerical Analysis Of Transverse Mode Competition In Ridge Waveguide Semiconductor Lasers", Proc. SPIE 1025, Semiconductor Lasers, (5 April 1989); doi: 10.1117/12.950213; https://doi.org/10.1117/12.950213