Phase-Locked Index-Guided Semiconductor Laser Arrays

Ronald R. Drenten; Jan Opschoor; Carel J. van der Poel; Cornelis J. Reinhoudt; Adriaan Valster; Gerard A. Acket

doi:10.1117/12.950198

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5 April 1989 Phase-Locked Index-Guided Semiconductor Laser Arrays

Ronald R. Drenten; Jan Opschoor; Carel J. van der Poel; Cornelis J. Reinhoudt; Adriaan Valster; Gerard A. Acket

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Proceedings Volume 1025, Semiconductor Lasers; (1989) https://doi.org/10.1117/12.950198
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

The performance of parallel and Y-junction arrays has been studied experimentally; calculations of modes in Y-junctions, based on a new model are presented. A flat nearfield distribution from a parallel-stripe array has been achieved by spatially chirping the inter stripe distances. A 2/1 Y-junction array in ',ISIS structure has been realised, which lases in a stable in-phase mode up to the mirror damage level. In contrast, we show a 2/3 Y-junction ridge-guide array, with an InGaP active, layer (λ =660 nm.), which does not start in an in-phase mode.

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Ronald R. Drenten, Jan Opschoor, Carel J. van der Poel, Cornelis J. Reinhoudt, Adriaan Valster, and Gerard A. Acket "Phase-Locked Index-Guided Semiconductor Laser Arrays", Proc. SPIE 1025, Semiconductor Lasers, (5 April 1989); https://doi.org/10.1117/12.950198

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