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5 April 1989 Phase-Locked Index-Guided Semiconductor Laser Arrays
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Proceedings Volume 1025, Semiconductor Lasers; (1989) https://doi.org/10.1117/12.950198
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
The performance of parallel and Y-junction arrays has been studied experimentally; calculations of modes in Y-junctions, based on a new model are presented. A flat nearfield distribution from a parallel-stripe array has been achieved by spatially chirping the inter stripe distances. A 2/1 Y-junction array in ',ISIS structure has been realised, which lases in a stable in-phase mode up to the mirror damage level. In contrast, we show a 2/3 Y-junction ridge-guide array, with an InGaP active, layer (λ =660 nm.), which does not start in an in-phase mode.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ronald R. Drenten, Jan Opschoor, Carel J. van der Poel, Cornelis J. Reinhoudt, Adriaan Valster, and Gerard A. Acket "Phase-Locked Index-Guided Semiconductor Laser Arrays", Proc. SPIE 1025, Semiconductor Lasers, (5 April 1989); https://doi.org/10.1117/12.950198
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