10 February 2017 Analysis of laser induced thermal damage influenced by micro defect
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Proceedings Volume 10250, International Conference on Optical and Photonics Engineering (icOPEN 2016); 1025023 (2017) https://doi.org/10.1117/12.2267055
Event: Fourth International Conference on Optical and Photonics Engineering, 2016, Chengdu, China
Abstract
Thermal damage for material with the presence of a cone defect is studied. Firstly, a three-dimensional thermal damage model is established. Then, the distribution of electric field intensity and temperature of defective Si irradiated by laser pulse is calculated by the method of FDTD. At the same time, melting threshold of the Si material with defect is calculated and its variation rule with the height of the defect is analyzed. The results show that, the redistributed electric field is different in different depth of material. The maximum electric field intensity in the plane of each xOy is periodically changed over the height of material. The maximum electric field intensity in the first period near the surface is the crest value throughout the material. The value of melting threshold of material is the lowest when height of defect is 240 nm.
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Xiao-Bing Zhu, Xiao-Bing Zhu, Long-Xia Zhang, Long-Xia Zhang, Rong-Zhu Zhang, Rong-Zhu Zhang, } "Analysis of laser induced thermal damage influenced by micro defect", Proc. SPIE 10250, International Conference on Optical and Photonics Engineering (icOPEN 2016), 1025023 (10 February 2017); doi: 10.1117/12.2267055; https://doi.org/10.1117/12.2267055
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