Asymmetric, nonbroadened waveguide structures for double QW high-power 808nm diode laser

S. P. Abbasi; M. H. Mahdieh

doi:10.1117/12.2257308

13 January 2017 Asymmetric, nonbroadened waveguide structures for double QW high-power 808nm diode laser

S. P. Abbasi, M. H. Mahdieh

Proceedings Volume 10254, XXI International Symposium on High Power Laser Systems and Applications 2016; 1025406 (2017) https://doi.org/10.1117/12.2257308
Event: XXI International Symposium on High Power Laser Systems and Applications, 2016, Gmunden, Austria

Abstract

In this paper, we propose an asymmetric epitaxial layer structre for designing 808nm diode laser. In this asymmetric sructure, the p-waveguide is reduced in thickness and the p-cladding is doped for increasing the thermal conductivity and consequently better heat extraction. The main purpose of using such design is enhancing the laser gain by reduction of loss in laser cavity, and reduction of electrical and thermal resistivity of the diode laser.

Citation Download Citation

S. P. Abbasi and M. H. Mahdieh "Asymmetric, nonbroadened waveguide structures for double QW high-power 808nm diode laser", Proc. SPIE 10254, XXI International Symposium on High Power Laser Systems and Applications 2016, 1025406 (13 January 2017); https://doi.org/10.1117/12.2257308

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