13 January 2017 2.94 μm diode side pumped ErYAG laser
Author Affiliations +
Proceedings Volume 10254, XXI International Symposium on High Power Laser Systems and Applications 2016; 102540F (2017) https://doi.org/10.1117/12.2257652
Event: XXI International Symposium on High Power Laser Systems and Applications, 2016, Gmunden, Austria
Abstract
We have demonstrated an average output power of 10 W quasi-continuous-wave mid-infrared laser at 2.94 μm from a diode laser (LD) side-pumped Er-doped yttrium aluminum garnet (YAG) crystal. The Er:YAG crystal was composed of Er-doped (50% doped) (YAG) bonded to undoped YAG. The LD was operated at a repetition rate of 150Hz and a pulse-width of 300 μs. The optical-optical conversion efficiency and the slope efficiency were 5.6% and 9.1%, respectively. The slope efficiency was not saturation yet, a higher output power can be expected with a higher LD pump power and colder temperature of the Er:YAG crystal.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhi Xu, Pengyuan Wang, Wanfa Liu, Yimin Li, Baodong Gai, Yannan Tan, Chunyan Jia, Jingwei Guo, "2.94 μm diode side pumped ErYAG laser", Proc. SPIE 10254, XXI International Symposium on High Power Laser Systems and Applications 2016, 102540F (13 January 2017); doi: 10.1117/12.2257652; https://doi.org/10.1117/12.2257652
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT

Tm:Y2SiO5 and Tm:SrY4(SiO4)3O microchip lasers
Proceedings of SPIE (April 11 1996)
Diode pumping of LaxNd1-xMgAl11O19 lasers
Proceedings of SPIE (June 16 1993)
Ultrahigh-average-power solid state laser
Proceedings of SPIE (September 13 2002)

Back to Top