13 January 2017 LPP-EUV light source for HVM lithography
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Proceedings Volume 10254, XXI International Symposium on High Power Laser Systems and Applications 2016; 102541A (2017) https://doi.org/10.1117/12.2257464
Event: XXI International Symposium on High Power Laser Systems and Applications, 2016, Gmunden, Austria
Abstract
We have been developing a laser produced plasma extremely ultra violet (LPP-EUV) light source for a high volume manufacturing (HVM) semiconductor lithography. It has several unique technologies such as the high power short pulse carbon dioxide (CO2) laser, the short wavelength solid-state pre-pulse laser and the debris mitigation technology with the magnetic field. This paper presents the key technologies for a high power LPP-EUV light source. We also show the latest performance data which is 188W EUV power at intermediate focus (IF) point with 3.7% conversion efficiency (CE) at 100 kHz.
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T. Saito, T. Saito, Y. Ueno, Y. Ueno, T. Yabu, T. Yabu, A. Kurosawa, A. Kurosawa, S. Nagai, S. Nagai, T. Yanagida, T. Yanagida, T. Hori, T. Hori, Y. Kawasuji, Y. Kawasuji, T. Abe, T. Abe, T. Kodama, T. Kodama, H. Nakarai, H. Nakarai, T. Yamazaki, T. Yamazaki, H. Mizoguchi, H. Mizoguchi, } "LPP-EUV light source for HVM lithography", Proc. SPIE 10254, XXI International Symposium on High Power Laser Systems and Applications 2016, 102541A (13 January 2017); doi: 10.1117/12.2257464; https://doi.org/10.1117/12.2257464
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