8 March 2017 Preparation and damage characteristics of broad bandwidth HR films for picoseconds laser system
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Proceedings Volume 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016; 102551B (2017) https://doi.org/10.1117/12.2267391
Event: Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 2016, Jinhua, Suzhou, Chengdu, Xi'an, Wuxi, China
Abstract
High reflection films for 800nm picoseconds laser system requires broad bandwidth, which is usually about ±50nm, or even to ±70nm, and a high laser damage threshold is needed at the same time. Multilayer dielectrics using three materials Nb2O5/SiO2-HfO2/SiO2 were fabricated by electron beam evaporation. Benefit from its high refractive index of Nb2O5 and the high damage threshold of HfO2 films, the multilayer dielectrics were prepared successfully, which have more than 99.5% reflectance within bandwidth larger than 140nm around the center wavelength of 800 nm. The laser damage characteristics of the films at 150ps, 1Hz were studied, and the damage mechanism was analyzed.
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Guoyun Long, Guoyun Long, Yaoping Zhang, Yaoping Zhang, Junqi Fan, Junqi Fan, } "Preparation and damage characteristics of broad bandwidth HR films for picoseconds laser system", Proc. SPIE 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 102551B (8 March 2017); doi: 10.1117/12.2267391; https://doi.org/10.1117/12.2267391
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