8 March 2017 The growth characters of InSb/GaSb quantum dots by LP-MOCVD
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Proceedings Volume 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016; 1025536 (2017) https://doi.org/10.1117/12.2266716
Event: Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 2016, Jinhua, Suzhou, Chengdu, Xi'an, Wuxi, China
Abstract
InSb quantum dots of high quality and high density is grown epitaxially by LP-MOCVD technology on GaSb substrate, and some parameters influenced surface pattern of InSb is analyzed such as source flow, phase V/III ratio, growth temperature, pressure in reaction chamber, etc. Experiment obtained a set of optimized parameters of InSb/GaSb quantum dots: 475℃, 200mbar, V/III=1. Under optimized epitaxial parameters, using atomic-like layer growth pattern and connecting In and Sb organic source for four times alternatively can prepare InSb/GaSb quantum dots whose density can be up to 1.69×1010cm-2.
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Shengtao Yu, Shengtao Yu, Xiaohuan Lu, Xiaohuan Lu, Bin Zhang, Bin Zhang, Cui Xiong, Cui Xiong, Chen Cai, Chen Cai, Liankai Wang, Liankai Wang, } "The growth characters of InSb/GaSb quantum dots by LP-MOCVD", Proc. SPIE 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 1025536 (8 March 2017); doi: 10.1117/12.2266716; https://doi.org/10.1117/12.2266716
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