8 March 2017 Fabrication of GaN quantum dots by MOCVD for intersubband transitions infrared detectors
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Proceedings Volume 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016; 102553Z (2017) https://doi.org/10.1117/12.2268069
Event: Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 2016, Jinhua, Suzhou, Chengdu, Xi'an, Wuxi, China
Abstract
The inter-sub-band transitions of GaN quantum dots are in the infrared spectrum, which have enormous potentials in fabrication the high-performance infrared detectors. In this letter, the growth of multi-layer stacks of GaN quantum dots have been grown via MOCVD, including the growth of AlN buffer, GaN quantum dots and AlN caplayer. In the end, the multi-layer GaN quantum dots with uniform-size and excellent optical performance have been obtained, which are verified by the AFM and photoluminescense results.
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Zhiqiang Qi, Rui Yang, Cheng Zeng, Wenliang Hu, Zhijie Zhang, Chensheng Wang, "Fabrication of GaN quantum dots by MOCVD for intersubband transitions infrared detectors", Proc. SPIE 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 102553Z (8 March 2017); doi: 10.1117/12.2268069; https://doi.org/10.1117/12.2268069
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