8 March 2017 Effects of isolation trench depth on bulk integrated quenching resistors and breakdown voltage of the silicon photomultiplier with bulk integrated quenching resistors
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Proceedings Volume 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016; 102554B (2017) https://doi.org/10.1117/12.2268316
Event: Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 2016, Jinhua, Suzhou, Chengdu, Xi'an, Wuxi, China
Abstract
Much attention has been paid to silicon photomultiplier (SiPM) for single photon resolution. The New Devices Laboratory, Beijing Normal University developed a SiPM with bulk integrated quenching resistors, which has simple, compact structure, can achieve high dynamic range. This paper presents a bulk resistor type SiPM with trenches isolation. The effects of the trench depth on quenching bulk resistors and breakdown voltage are studied by simulation. The bulk quenching resistors and breakdown voltage can be adjusted by the depth of the isolation trench when the wafer resistivity is high. The results are important for the design of the bulk resistors quenching SiPM.
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Ru Yang, Hesheng Tan, Rongdan Liu, Ran He, Kun Liang, Dejun Han, "Effects of isolation trench depth on bulk integrated quenching resistors and breakdown voltage of the silicon photomultiplier with bulk integrated quenching resistors", Proc. SPIE 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 102554B (8 March 2017); doi: 10.1117/12.2268316; https://doi.org/10.1117/12.2268316
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